IRFPG50 www.vishay.com Vishay Siliconix S22-0057-Rev. C, 31-Jan-2022 5 Document Number: 91254 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT …

Third Generation HEXFETs International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO …

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For N-Channel HEXFET Power MOSFETs. This product has been designed and qualified for the industrial market. Qualification Standards can be found on IR’s Web site. 233 Kansas St., El …

HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state re-sistance …

IRF50N06 Transistor Datasheet, IRF50N06 Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog.

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Maximum Effective Transient Thermal Impedance, Junction-to-Case.

DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. CONTROLLING DIMENSION : INCH. CONFORMS TO JEDEC OUTLINE TO-247-AC.

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HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance …

IRF510PBF – N-Channel 100 V 5.6A (Tc) 43W (Tc) Through Hole TO-220AB from Vishay Siliconix. Pricing and Availability on millions of electronic components from Digi-Key Electronics.

Part #: IRFPC50. Download. File Size: 164Kbytes. Page: 6 Pages. Description: Power MOSFET (Vdss=600V, Rds (on)=0.60ohm, Id=11A). Manufacturer: International Rectifier.

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HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance …