100V Single N-Channel Power MOSFET in a TO-220 package.

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

IR MOSFET 100 V in a D²PAK package. The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.

IRF3710STRLPBF – N-Channel 100 V 57A (Tc) 200W (Tc) Surface Mount D2PAK from Infineon Technologies. Pricing and Availability on millions of electronic components from Digi-Key Electronics.

View datasheets for IRF3710(S,L)PbF by Infineon Technologies and other related components here.

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Jul 15, 1997 · IRF3710 PRELIMINARY HEXFET® Power MOSFET PD 9.1309B Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the ...

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Mar 6, 2025 · IRF3710PBF Infineon Technologies MOSFETs MOSFT 100V 57A 23mOhm 86.7nC datasheet, inventory, & pricing.