You should look on datasheet of the gate driver circuit, then look for max. current and \$R_{ds_{ON}}\$, look for internal gate resistance of the MOSFET, too. $$I_g=\dfrac{V_{driver}}{R_{ds_{ON}}+R_g+R_{g_{MOSFET}}}$$

Dec 22, 2010 · Does someone know how to do the Auto-Impedance Method to measure the gate resistance (Rg) of a MOSFET? A MOSFET has very high input impedance. Low input impedance would be due to external circuitry.

Power MOSFET: Rg impact on applications By Giuseppe Longo, Filadelfo Fusillo, Filippo Scrimizzi Introduction This report shows the analysis performed on Power MOSFET devices, in which the goal is the evaluation of the intrinsic R g parameter while it …

Dec 1, 2013 · Rg value too high making a slow switch is intuitive, but if we want to use the MOSFET as a switch and the intent is to turn it ON as fast as possible, why do we need a resistor at all? Can it be eliminated and what are the side effects?

Jan 11, 2017 · It is why MOSFET drivers provide Gate signal of 1A or 2A (eg IR2110) However, to not force the MOSFET driver must put a resitor for limiting Gate transient current. It depends on the Gate voltage growth rate (dv/dt) and gate-drain capacitance (Cgd).

栅极电荷是指为导通MOSFET而注入到栅极电极的电荷量，有时也称为总栅极电荷。 总栅极电荷包括Qgs 和Qgd。 Q gs表示栅极-源的电荷量，Qgd表示栅极-漏极的电荷量，也称米勒电荷量。 单位为库伦（C），总栅极电荷量越大，则导通MOSFET所需的电容充电时间变长，开关损耗增加。 数值越小，开关损耗就越小，从而实现高速开关。 换言之，栅极电荷也可以表示为器件转换为导通状态时电流进入选通端接的时间积分，此时开关损耗等于栅极电荷、栅电压和频率的乘积。 通 …

RG is the effective total gate resistance defined as the sum of internal gate resistance Rg of the MOSFET and any external resistance Rgext that is part of the gate drive circuitry. Ciss is the effective input capacitance of the MOSFET as seen by the gate drive circuit.

Feb 23, 2003 · A simple and reliable method to determine a MOSFET's gate resistance (R_g) directly from S-parameter measurements is presented.

Jan 26, 2024 · I have a doubt and can't find relevant information in books/internet about setting a suitable value of Rg resistance during MOSFET biasing using a large drain-to-gate feedback resistance. Here is a visualization of the problem:

You can compare the 400mA maximum load current and the switching time to the SOA (Safe Operating Area) of the MOSFET you have in mind. The worst-case stress on the transistor is when it is turning on (or prematurely off) with a few hundred mA flowing and most of the supply voltage across the MOSFET.