
MP1918 | 100V, High-Frequency, Half-Bridge GaN/MOSFET Driver …
The MP1918 is a 100V half-bridge driver designed to drive enhancement mode gallium nitride (GaN) FETs or N-channel MOSFETs with a low gate threshold voltage in a half-bridge or synchronous application. The MP1918 features independent high-side (HS) and low-side (LS) pulse-width modulation (PWM) inputs.
MP 18 - Wikipedia
Introduced into service in 1918 by the German Army during World War I, the MP 18 was intended for use by the Sturmtruppen, assault groups specialized in trench combat, as a short-range offensive weapon that would provide individual soldiers with increased firepower over a pistol.
The MP1918 has two separate gate outputs , allowing the turn -on and turn -off capabilities to be independently adjusted by adding an impedance to the gate loop. The MP1918 can operate up to several MHz. The MP1918 is available in a QFN -14 (3mmx3mm) package with …
MP1918 100V Half-Bridge GaN MOSFET Drivers - MPS | Mouser
Sep 11, 2024 · Monolithic Power Systems (MPS) MP1918 100V Half-Bridge GaN MOSFET Drivers are designed for driving enhancement mode Gallium Nitride (GaN) FETs or N-channel MOSFETs.
Client Challenge - Monolithic Power Systems
The MPQ1918-AEC1 is designed to drive enhancement mode Gallium Nitride (GaN) FETs or N-channel MOSFETs with a low gate threshold voltage in a half-bridge or synchronous …
MP1918GQE-P | DigiKey Electronics
MP1918GQE-P – Half-Bridge Gate Driver IC Non-Inverting 14-QFN (3x3) from Monolithic Power Systems Inc.. Pricing and Availability on millions of electronic components from Digi-Key Electronics.
MP1918 - monolithicpower.cn
MP1918 是一款 100V 半桥驱动器,用于在半桥或同步应用中驱动具有低栅极阈值电压的增强型氮化镓 (GaN) FET 或 N 通道 MOSFET。 MP1918 具有独立的上管 (HS) 和下管 (LS) 脉宽调制 (PWM) 输入。 它为上管 (HS) 驱动器电压提供自举 (BST) 技术,且工作电压高达 100V。 它采用新型充电技术预防 HS 驱动器电压超过 VCC 电压 (V CC),从而防止栅极电压超过 GaN FET 的最大栅源电压额定值。 MP1918 提供两个独立栅极输出,通过向栅极环路添加阻抗可以独立调节 …
MP1918GQE-Z Monolithic Power Systems (MPS) | Mouser
Mar 9, 2025 · MP1918GQE-Z Monolithic Power Systems (MPS) Gate Drivers 100V, High-Frequency, Half-Bridge GaN/MOSFET Driver datasheet, inventory, & pricing.
MPQ1918-AEC1 - Monolithic Power
MPQ1918-AEC1 专为驱动半桥或同步应用中的增强型氮化镓 (GaN) FET 和低栅极阈值电压 N 沟道 MOSFET而设计。 MPQ1918-AEC1 采用独立的上管 (HS) 和下管 (LS) 脉宽调制 (PWM) 输入。 它采用自举技术提供 HS 驱动电压自举,并可以在高达 100V 的电压下工作。 其新型充电技术可防止 HS 驱动电压超过 VCC 电压 (V CC),从而防止栅极电压超过 GaN FET 的最大栅源电压额定值。 MPQ1918-AEC1 提供两个独立的栅极输出,可通过增加栅极环路阻抗来独立调节导通与关断能 …
MP Q1918 ± 100V , HIGH -FREQUENCY, HALF BRIDGE GAN/MOSFET DRIVER , AEC -Q100 MP Q1918 Rev. 1.0 MonolithicPower.com 6 4/13/2023 MPS Proprietary Information.
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