IRFZ46 Product details Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

55V Single N-Channel Power MOSFET in a TO-220 package.

IRFZ46 Transistor Datasheet, IRFZ46 Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. Max. HEXFET® is a registered trademark of International Rectifier. Max.

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

HEXFET® Power MOSFET • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Ease of Paralleling • Simple Drive Requirements. VDSS= 50V. RDS(on) ID= 50*A. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.

Apr 18, 2021 · IRFZ46N is an N Channel MOSFET available in TO-220 package. This transistor can be used in wide variety of applications. The transistor can drive max load of 53A and 180A in pulse mode. The maximum load voltage is 55V and power dissipation of …

Description: Power MOSFET (Vdss=55V, Rds (on)=16.5mohm, Id=53A). Manufacturer: International Rectifier.