Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

IRFZ44NPBF – N-Channel 55 V 49A (Tc) 94W (Tc) Through Hole TO-220AB from Infineon Technologies. Pricing and Availability on millions of electronic components from Digi-Key Electronics.

IRFZ44NPBF Product details Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

6 days ago · IRFZ44NPBF Infineon Technologies MOSFETs MOSFT 55V 49A 17.5mOhm 42nC datasheet, inventory, & pricing.

View IRFZ44NPbF by Infineon Technologies datasheet for technical specifications, dimensions and more at DigiKey.

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IRFZ44NPBF is a N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance.

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

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IRFZ44NLPBF by Infineon is a N-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 160A IDM, 150mJ EAS, and 0.0175 ohm RDS (on). Operating at up to 175°C, it has a power dissipation of 94W in an IN-LINE package.