
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
IRFZ44NPBF Infineon Technologies | Discrete Semiconductor …
IRFZ44NPBF – N-Channel 55 V 49A (Tc) 94W (Tc) Through Hole TO-220AB from Infineon Technologies. Pricing and Availability on millions of electronic components from Digi-Key Electronics.
IRFZ44NPBF Datasheet (PDF) - International Rectifier
IRFZ44NPBF Product details Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
IRFZ44NPBF Infineon Technologies | Mouser
6 days ago · IRFZ44NPBF Infineon Technologies MOSFETs MOSFT 55V 49A 17.5mOhm 42nC datasheet, inventory, & pricing.
IRFZ44NPbF Datasheet by Infineon Technologies - Digi-Key …
View IRFZ44NPbF by Infineon Technologies datasheet for technical specifications, dimensions and more at DigiKey.
IRFZ44NPbF Datasheet by Infineon Technologies - Digi-Key …
View datasheets for IRFZ44NPbF by Infineon Technologies and other related components here.
IRFZ44NPBF - Newark Electronics
IRFZ44NPBF is a N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
IRFZ44NPBF Infineon - MOSFETs - Distributors, Price ... - Octopart
Find the best pricing for Infineon IRFZ44NPBF by comparing bulk discounts from 11 distributors. Octopart is the world's source for IRFZ44NPBF availability, pricing, and technical specs and other electronic parts.
IRFZ44NPBF by International Rectifier - Corphita
IRFZ44NLPBF by Infineon is a N-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 160A IDM, 150mJ EAS, and 0.0175 ohm RDS (on). Operating at up to 175°C, it has a power dissipation of 94W in an IN-LINE package.