Aug 26, 2022 · IRF5210 is a power MOSFET available in TO-220 package. This post describes IRF5210 MOSFET pinout, explanation, equivalents, features, applications and other useful information about this device.

-100V Single P-Channel Power MOSFET in a TO-220 package.

Explore the IRF5210, a high-performance power MOSFET from the HEXFET Power MOSFET series, designed for robust industrial and commercial applications. This article provides an in-depth look at the IRF5210, from its detailed pin layout and CAD models to its versatile applications and technical specifications.

Part #: IRF5210. Download. File Size: 125Kbytes. Page: 8 Pages. Description: Power MOSFET (Vdss=-100V, Rds (on)=0.06ohm, Id=-40A). Manufacturer: International Rectifier.

HEXFET MOSFET TECHNOLOGY. IRF5M5210. Fifth Generation HEXFET power MOSFETs from IR HiRel utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area.

ƒ Uses IRF5210 data and test conditions — Pulse width ≤ 300µs; duty cycle ≤ 2%. Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) †ƒ ––– ––– p …

Jul 29, 2021 · IRF5210 40A 100V P-Channel Power MOSFET is advanced processing techniques to achieve extremely low on-resistance per silicon area.

View IRF5210(S,L)PbF by Infineon Technologies datasheet for technical specifications, dimensions and more at DigiKey.

Nov 9, 2023 · The IRF5210PBF is a P-channel HEXFET® Power MOSFET. This HEXFET® power MOSFET utilizes advance processing techniques to achieve extremely low 0n-resistance per silicon area. Advanced Process Technology. New Ultra Low On-Resistance. Fast Switching. Dynamic dv/dt Rating. Fully Avalanche Rated.

Mar 18, 2022 · IRF5210 is a 40A 100V P-Channel Power MOSFET. This article mainly covers its pinout, datasheet, application and more information about IRF5210.