-100V Single P-Channel Power MOSFET in a TO-220 package.

Aug 26, 2022 · IRF5210 is a power MOSFET available in TO-220 package. This post describes IRF5210 MOSFET pinout, explanation, equivalents, features, applications and other useful information about this device.

Description: Power MOSFET (Vdss=-100V, Rds (on)=0.06ohm, Id=-40A). Manufacturer: International Rectifier.

View IRF5210(S,L)PbF by Infineon Technologies datasheet for technical specifications, dimensions and more at DigiKey.

IRF5210PBF – P-Channel 100 V 40A (Tc) 200W (Tc) Through Hole TO-220AB from Infineon Technologies. Pricing and Availability on millions of electronic components from Digi-Key Electronics.

The IRF5210 is a 40 A, 100 V P-Channel Power MOSFET, renowned for its outstanding efficiency and reliability. Advanced manufacturing techniques reduce its on-resistance per silicon area significantly, enhancing both the speed of switching and overall performance.

IR MOSFET™ P-channel Power MOSFET ; D2PAK TO-263 package; 60 mOhm;

ƒ Uses IRF5210 data and test conditions — Pulse width ≤ 300µs; duty cycle ≤ 2%. Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) †ƒ ––– ––– p …

IRF5210 Datasheet(HTML) 1 Page - International Rectifier : zoom in zoom out 1 / 8 page. IRF5210. HEXFET ® Power MOSFET. PD - 91434A. Fifth Generation HEXFETs from International Rectifier. utilize advanced processing techniques to achieve. extremely low on-resistance per silicon area. This benefit,

Jul 29, 2021 · IRF5210 40A 100V P-Channel Power MOSFET is advanced processing techniques to achieve extremely low on-resistance per silicon area.