Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.

IRF520 Transistor Datasheet, IRF520 Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog

Jan 12, 2019 · The IRF520 is a Power Mosfet with 9.2A collector current and 100V breakdown voltage. The mosfet has a low gate threshold voltage of 4V and hence commonly used with microcontrollers like Arduino for switching high current loads.

Description: N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS. Manufacturer: STMicroelectronics.

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.

IRF520. Power MOSFET. General Information: General Information. Useful Web Links. Markings: Part Marking Information. TO-220, I2PAK (TO-262), D2PAK (TO-263) (High Voltage) Packaging Information: Package Information. TO-220AB (High Voltage) Reliability Data: …

10 www.irf.com Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 08/04 Dimensions are shown in millimeters (inches)

View IRF520 by STMicroelectronics datasheet for technical specifications, dimensions and more at DigiKey.

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.

Description: Power MOSFET (Vdss = 100 V, Rds (on) = 0.20 Ohm, Id= 9.7A). Manufacturer: International Rectifier.