-55V Single P-Channel Power MOSFET in a TO-220 package.

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

IRF4905PBF – P-Channel 55 V 74A (Tc) 200W (Tc) Through Hole TO-220AB from Infineon Technologies. Pricing and Availability on millions of electronic components from Digi-Key Electronics.

Oct 30, 2020 · IRF4905 is a P channel MOSFET designed to drive load voltage of upto -55V with the maximum load current of -74A and in pulse mode it can drive load of upto -260A. The saturation voltage or the voltage on which the transistor completely switched ON or connects drain to source is -2V to -4V.

The IRF4905 is a P-channel MOSFET commonly used in high-power applications such as amplifiers, power supplies, and motor drives. It handles large power loads efficiently, making it crucial in circuits that require reliable power management and high-performance switching.

IRF4905 HEXFET® Power MOSFET PD - 9.1280C Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer

The IRF4905 stands out for its reliability and efficiency, making it the preferred selection for applications requiring rapid switching speeds and the power control system. In this article, we have discussed IRF4905, check its pinout, equivalent, practical applications, distinctive features, as well as instruction on when and where to employ ...

View IRF4905(S,L)PbF by Infineon Technologies datasheet for technical specifications, dimensions and more at DigiKey.

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.