-55V Single P-Channel Power MOSFET in a TO-220 package.

IRF4905PBF – P-Channel 55 V 74A (Tc) 200W (Tc) Through Hole TO-220AB from Infineon Technologies. Pricing and Availability on millions of electronic components from Digi-Key Electronics.

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Its gate trigger voltage, starting from -2 volts up to -20V, making it suited to a low-voltage switching control applications as well. As a result of its exceptionally low drain-to-source resistance, the device has an operating current capacity of -79 Amp.

IRF4905 HEXFET® Power MOSFET PD - 9.1280C Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer

Oct 30, 2020 · IRF4905 is a P channel MOSFET designed to drive load voltage of upto -55V with the maximum load current of -74A and in pulse mode it can drive load of upto -260A. The saturation voltage or the voltage on which the transistor completely switched ON or connects drain to source is -2V to -4V.

View IRF4905(S,L)PbF by Infineon Technologies datasheet for technical specifications, dimensions and more at DigiKey.

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Jameco Electronics IRF4905 MOSFET, Transistor. Products in stock and ready to ship. Quotes, samples and datasheets available at Jameco Electronics.

-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package. Unfortunately, your browser does not support embedded frames (iframes): You can view the embedded page here.