Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

60V Single N-Channel Power MOSFET in a TO-220 package. The IR MOSFET™ family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to …

55V Single N-Channel Power MOSFET in a TO-220 package. Unfortunately, your browser does not support embedded frames (iframes): You can view the embedded page here.

Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined …

Part #: IRF1010. Download. File Size: 632Kbytes. Page: 7 Pages. Description: N-Channel Power MOSFET. Manufacturer: Nell Semiconductor Co., Ltd.

Manufacturer: Nell Semiconductor Co., Ltd. Description: N-Channel Power MOSFET. 59 Results. Part #: IRF1010E. Datasheet: 195Kb/8P. Manufacturer: International Rectifier.

-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with …

IRF1010ZSTRLPBF – N-Channel 55 V 75A (Tc) 140W (Tc) Surface Mount D2PAK from Infineon Technologies. Pricing and Availability on millions of electronic components from Digi-Key …

IRF1010E Datasheet and Replacement Type Designator: IRF1010E Type of Transistor: MOSFET Type of Control Channel: N -Channel Pdⓘ - Maximum Power Dissipation: 200 W |Vds|ⓘ - …

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.