NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications. The small emitter structures, with integrated emitter-ballasting resistors, ensure high output voltage capabilities at a low distortion level.

BFG135,115 – RF Transistor NPN 15V 150mA 7GHz 1W Surface Mount SC-73 from NXP USA Inc.. Pricing and Availability on millions of electronic components from Digi-Key Electronics.

NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications. The small emitter structures, with integrated emitter-ballasting resistors, ensure high output voltage capabilities at a low distortion level.

View BFG135 by NXP USA Inc. datasheet for technical specifications, dimensions and more at DigiKey.

NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications. The small emitter structures, with integrated emitter-ballasting resistors, ensure high output voltage capabilities at a low distortion level.

6 days ago · BFG135,115 NXP Semiconductors RF Bipolar Transistors NPN 150MA 15V 7GHZ datasheet, inventory, & pricing.

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NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications. The small emitter structures, with integrated emitter-ballasting resistors, ensure high output voltage capabilities at a low distortio. BFG135 Description.

NPN 7GHz wideband transistor BFG135. DESCRIPTION NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications. The small emitter structures, with integrated emitter-ballasting resistors, ensure high output voltage capabilities at a low distortion level.

Description: NPN Silicon RF Transistor (For low-distortion broadband output amplifier stages in antenna and telecommunications). Manufacturer: Siemens Semiconductor Group.

Description: RF Manual 16th edition. Manufacturer: NXP Semiconductors.

BFG135 Transistor Datasheet pdf, BFG135 Equivalent. Parameters and Characteristics

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NPN 7GHz wideband transistor BFG135. DESCRIPTION NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications. The small emitter structures, with integrated emitter-ballasting resistors, ensure high output voltage capabilities at a low distortion level.

Description: NPN 7GHz wideband transistor. 7 Results. Datasheet: 9MbKb/130P. Manufacturer: NXP Semiconductors.

NXP Semiconductors BFG135 technical specifications, attributes, and parameters. Download the BFG135 datasheet from [object Object].

This document provides data and specifications for the BFG135, an NPN silicon planar epitaxial transistor intended for wideband amplifier applications up to 7GHz. Key specifications include a minimum DC current gain of 80, transition frequency of 7GHz, and maximum unilateral power gain of 16dB at 500MHz.

Part #: BFG135. Description: NPN 7GHz wideband transistor. File Size: 107.15 Kbytes. Manufacturer: NXP Semiconductors.

The BFG135 is a 7GHz NPN Silicon Planar Epitaxial Transistor intended for wideband amplifier applications. The small emitter structures, with integrated emitter-ballasting resistors, ensure high output voltage capabilities at a low distortion level.

BFG135 Datasheet(HTML) 2 Page - NXP Semiconductors : zoom in zoom out 2 / 12 page. 1995 Sep 13. 2. NXP Semiconductors. Product specification. NPN 7GHz wideband transistor. BFG135. DESCRIPTION. NPN silicon planar epitaxial transistor. in a plastic SOT223 envelope, intended for wideband amplifier.