Description: PNP EPITAXIAL SILICON TRANSISTOR. Manufacturer: Fairchild Semiconductor.

: BC308/309-50-30 V V VCEO Collector-Emitter Voltage: BC307: BC308/309-45-25 V V VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -100 mA PC Collector Power Dissipation 500 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C BC307/308/309 Switching and Amplifier Applications • Low Noise: BC309 1. Collector 2 ...

BC308 Transistor Datasheet pdf, BC308 Equivalent. Parameters and Characteristics.

BC308 – Bipolar (BJT) Transistor PNP 25 V 100 mA 130MHz 500 mW Through Hole TO-92-3 from onsemi. Pricing and Availability on millions of electronic components from Digi-Key Electronics.

Jun 24, 2024 · BC308 is a PNP BJT transistor available in TO-92 package. In this post we will understand BC308 transistor pinout, equivalent, applications, features, electrical characteristics, safe operating guidelines and other details of this component.

The CENTRAL SEMICONDUCTOR BC307, BC308, and BC309 types are PNP Silicon Transistors manufactured by the epitaxial planar process, designed for general purpose amplifier applications. Central’s operations team provides the highest level of support to insure product is delivered on-time.

BC308B Transistor Datasheet pdf, BC308B Equivalent. Parameters and Characteristics.

The BC858 (SOT-23), BC858W (SOT-323), BC859 (SOT-23) and BC859W (SOT-323) is the SMD version of the BC308 transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Switching and amplifier applications. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc (max) = 500mW. Collector current Ic = -100mA.

onsemi BC308 technical specifications, attributes, and parameters. Download the BC308 datasheet from [object Object].