Recommended for first stages of EQ and M.C. head amplifiers.

• Recommended for first stages of EQ and M.C. head amplifiers. Part #: 2SK170. Download. File Size: 218Kbytes. Page: 4 Pages. Description: FET, Silicon N Channel Junction Type (for Low Noise Audio Amplifier). Manufacturer: Toshiba Semiconductor.

3 days ago · 2SK170-GR(F) Toshiba JFETs N CHANNEL JFET Vds 10V Idss 3mA datasheet, inventory, & pricing.

Aug 20, 2022 · 2SK170 is an N channel low noise junction gate field effect transistor (JFET) manufactured in TO-92 package. The transistor is designed for low noise audio amplifier applications.

Silicon N-Channel MOSFET.

2SK170 Transistor Datasheet, 2SK170 Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog.

2SK1702007-11-011TOSHIBA Field Effect Transistor Silicon N Channel Junction Type2SK170Low Noise Audio Amplifier Applications• Recommended for first stages of EQ and M.C. head amplifiers.•.

2SK170 is an N-Channel MOSFET transistor. This article is going to introduce features, applications, replacement, datasheet pdf, and other details about 2SK170.

2SK170 1 2003-03-25 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK170 Low Noise Audio Amplifier Applications • Recommended for first stages of EQ and M.C. head amplifiers. • High |Yfs|: |Yfs| = 22 mS (typ.) (VDS = 10 V, VGS = 0, IDSS = 3 mA) • High breakdown voltage: VGDS = −40 V • Low noise: En = 0.95 nV/Hz1/2 (typ.)

Nov 26, 2024 · The 2SK170, celebrated for its broad utility and outstanding features, finds applications across various domains. Its notable attributes include quick power switching capabilities, minimal drive current needs, and exceptional performance in audio and power management systems.