Vishay Intertechnology has introduced a new Gen 4.5 650 V E Series power MOSFET that delivers high efficiency and power density for telecom, industrial, and computing applications ...

SiHK050N65E is an n-channel device aimed at power factor correction and subsequent dc-dc converter blocks up to 6kW. Typical ...

Superjunction Device Enables High Power Ratings and Density While Lowering Conduction and Switching Losses to Increase ...

The team from Wisconsin-Madison claims to be the first to break the 2 kV barrier for monolithic bidirectional GaN HEMTs, with ...

Power device makers roll out their latest advances at APEC 2025, targeting a range of applications from AI data centers to ...

Infineon expands its XDP digital protection product family with the launch of the XDP711-001 48-V hot-swap controllers for AI ...

Latest editions said to offer industry’s best figure of merit. Single- and dual-output, automotive-grade devices target wide array of high-speed-switching commercial and industrial applications.

Taiwan Semiconductor (TSC) has expanded its PerFET family of power MOSFETs with the addition of 80V and 100V versions. Based ...

GaN specialist Efficient Power Conversion (EPC) has introduced the EPC2367, a next-generation 100 V eGaN FET for power ...

Infineon Technologies AG expands its XDP digital protection product family with the XDP711-001, a 48 V wide input voltage ...

Magnachip has added 25 Gen6 SJ MOSFETs with switching speeds improved by approximately 23%, reducing the RSP of applications ...