The team has just determined that its approach – involving plasma nitridation of the SiC surface, sputter deposition of SiO 2, and post-deposition annealing – reduces the interface state density near ...
A landmark development led by researchers from the University of Glasgow could help create a new generation of diamond-based ...
enhancing adhesion and minimizing thermal resistance. This thin application layer, coupled with the high conductivity of the aluminium micro and zinc oxide nanoparticle mix, ensures efficient heat ...
"We have produced BaTiO 3 nanostructures that form tiny islands on a silicon substrate," explains Dubourdieu. The nano-islands are trapezoidal in shape, with dimensions of 30–60 nm (on top), and ...
Silicon carbide technology is revolutionizing ... ROHM’s 4th generation SiC MOSFETs are designed with low ON resistance while maintaining short-circuit withstand capability. They feature reduced ...
In this study, we introduce a novel multi-layer 2.5D structure designed to incorporate a double-sided cooling (DSC) packaging technology into silicon-based ... inductance of the MOS switch module is 0 ...
After years of speculation around what it could look like, this week Nintendo officially revealed the successor to its most popular home console ever: the Nintendo Switch 2. The new device looks a ...
Developer Imagineer announced Sanrio Characters Miracle Match: Magical Onigokko, a new Nintendo Switch title where players control Sanrio characters and play tag. The game will come out on March ...
The Nintendo Switch 2, the successor to the Nintendo Switch system, will be released in 2025, the company said. In a new promotional video, Nintendo showcases a larger version of the Switch that ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback