Superjunction Device Enables High Power Ratings and Density While Lowering Conduction and Switching Losses to Increase ...

SiHK050N65E is an n-channel device aimed at power factor correction and subsequent dc-dc converter blocks up to 6kW. Typical ...

Power device makers roll out their latest advances at APEC 2025, targeting a range of applications from AI data centers to ...

The AO4606 integrates two powerful N-channel and P-channel MOSFETs to create a complete H-bridge circuit. This innovative design simplifies circuit layouts while enhancing integration and reliability.

Infineon expands its XDP digital protection product family with the launch of the XDP711-001 48-V hot-swap controllers for AI ...

Thanks to a combination of high-speed and low-loss switching, GaN high electron mobility transistors are able to excel in ...

Vishay Intertechnology has introduced a new Gen 4.5 650 V E Series power MOSFET that delivers high efficiency and power density for telecom, industrial, and computing applications ...

Infineon Technologies AG expands its XDP digital protection product family with the XDP711-001, a 48 V wide input voltage ...

These elements work differently in the two main types of transistor used today: bipolar junction transistors, which came first, and the metal-oxide-semiconductor field-effect transistor (MOSFET). A ...

Taiwan Semiconductor (TSC) has expanded its PerFET family of power MOSFETs with the addition of 80V and 100V versions. Based ...