A passivation method based on the atomic layer deposition of aluminium oxide (Al2O3) was developed to protect and enhance the performance of the transistors. With 15-nm-thick hafnium oxide (HfO2) as a ...

To investigate the electronic properties of a 2D FET based on single-crystalline aluminum oxide (c-Al2O3), researchers created a self-aligned MoS2 FET using a 2 nm thick layer of c-Al2O3.

The assays – which included 73 holes in three batches – included four metres at 50.3% Al2O3 (aluminium oxide) 3.1% SiO2 (silicon dioxide) from surface; four metres at 46.6% Al2O3, 0.7% SiO2 ...