Design-Reuse18d
Low Power 7T SRAM Cell Scheme - ''Saving Write Zero Power''
It is also shown that these tradeoffs are governed by two design parameters. In Section IV, measurement results of the simulated cell shown. In Section V, all discussions are summarized. II. 7 ...
Design-Reuse18d
A 55-nm Ultra Low Leakage SRAM Compiler with Optimized Power Gating Design
SRAM is in low leakage mode, but data in the cell is still retained. Un-like in [1]~[3], it also cuts off periphery circuit power to achieve a further low leakage. The reason to configure this mode is ...
Semiconductor Engineering28d
SRAM With Mixed Signal Logic With Noise Immunity in 3nm Nanosheet (IBM)
“A modular 4.26Mb SRAM based on a 82Kb/block structure with mixed signal logic is fabricated, characterized, and demonstrated with full functionality in a 3nm nanosheet (NS) technology. Designed ...