Electromagnetic metamaterials with negative physical parameters such as negative dielectric constant and negative magnetic ...
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Plasma technique doubles etch rate for 3D NAND flash memoryAtoms in the plasma interact with atoms in the ... which forms during the etching process when the silicon nitride reacts with the hydrogen fluoride. The research showed that ammonium ...
Standard NAND flash storage is used in microSD cards, USB drives, and solid-state drives in computers and phones. To fit more gigabytes into smaller spaces, manufacturers ...
Atoms in the plasma interact with atoms in the ... which forms during the etching process when the silicon nitride reacts with the hydrogen fluoride. The research showed that ammonium ...
This process combined controlled precursor pulses with continuous ammonia plasma, achieving uniformity ... films one atomic layer at a time. Silicon Nitride (SiNx): A chemical compound of silicon ...
Scientists have long sought to understand the exact mechanism behind water splitting by carbon nitride catalysts. For the first time, Dr. Paolo Giusto and his team captured the step-by-step ...
In recent years, metamaterials with negative physical parameters such as negative dielectric constant and negative magnetic permeability have attracted great attention due to their great potential in ...
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