NoMIS Power, a leader in advanced silicon carbide (SiC) power semiconductor technology, has announced a major breakthrough in improving the short-circuit withstand time (SCWT) of SiC MOSFETs. This ...

An enhancement MOSFET needs a voltage applied to a gate for ... polarity of the Gate signal and how it affects the device: An N-Channel device is activated when a positive voltage is applied ...

The AO4606 integrates two powerful N-channel and P-channel MOSFETs to create a complete H-bridge circuit. This innovative design simplifies circuit layouts while enhancing integration and reliability.

Toshiba has launched an N-channel power MOSFET to address the growing market demand for improved efficiency in power supply ...

"Successful deployment of next-generation LEO satellite constellations and other space-ready systems require radiation-tolerant discretes and ICs with lead times and production volumes that enable ...

Infineon is introducing a radiation-tolerant p-channel plastic-packged power mosfet for low-earth-orbit (LEO) space ...

This speaks to the goal [N-O-D-E] has for MOSFET.net — it’s designed to show you relevant tech news, and literally nothing else. The focus and simplicity is beautiful. Here’s wishing all the ...

Toshiba's N-channel power MOSFET to address the growing market demand for improved efficiency in power supply circuits.

The new device has a drain-source on-resistance RDS (ON) of 0.024-Ohm (max), the lowest in the DTMOSVI 600V series. It also improves power supply efficiency, which lowers heat generation. Combined ...