An enhancement MOSFET needs a voltage applied to a gate for ... polarity of the Gate signal and how it affects the device: An N-Channel device is activated when a positive voltage is applied ...
"Successful deployment of next-generation LEO satellite constellations and other space-ready systems require radiation-tolerant discretes and ICs with lead times and production volumes that enable ...
Toshiba's N-channel power MOSFET to address the growing market demand for improved efficiency in power supply circuits.
NoMIS Power, a leader in advanced silicon carbide (SiC) power semiconductor technology, has announced a major breakthrough in improving the short-circuit withstand time (SCWT) of SiC MOSFETs. This ...
Infineon is introducing a radiation-tolerant p-channel plastic-packged power mosfet for low-earth-orbit (LEO) space ...
This speaks to the goal [N-O-D-E] has for MOSFET.net ā itās designed to show you relevant tech news, and literally nothing else. The focus and simplicity is beautiful. Hereās wishing all the ...
Toshiba has launched an N-channel power MOSFET to address the growing market demand for improved efficiency in power supply ...
The new device has a drain-source on-resistance RDS (ON) of 0.024-Ohm (max), the lowest in the DTMOSVI 600V series. It also improves power supply efficiency, which lowers heat generation. Combined ...
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