Here is a detailed view of reverse polarity protection circuits for safeguarding battery-connected automotive systems.

This article describes a practical method to measure the junction temperature of an IC by demonstrating how to implement a direct readout temperature measuring method using the MOSFET body diode on a ...

Lexington, Mass. – STMicroelectronics' FDmesh high-volt-age n-channel power MOSFETs are a follow-on to the company's existing MDmesh MOSFET technology, adding a body diode with a short recovery time.

MALVERN, Pa., Oct. 05, 2022 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced a new fourth-generation 600 V EF Series fast body diode MOSFET in the low profile PowerPAK ...

Nov. 16, 2022 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced seven new MOSFET and diode power ... combine high efficiency fast body diode MOSFETs and SiC, FRED ...

MOSFETs and linear mode. In Part 1, we discussed the body diode, which is a PN junction diode that lies inside of the MOSFET, between the n- region in the drain and the P-well in the source.

Vishay is aiming at zero voltage and soft switching applications by improving mosfet body diodes in a range of 600V power mosfets. The body diodes in SiHx28N60EF (28A) and SiHx33N60EF (33A) are fast, ...

Notes: [1] As of February 22, 2024, Toshiba survey. [2] A switching action in which the MOSFET body diode switches from forward to reverse biased. [3] Values measured by Toshiba. The new products ...

he did so with a diode that you might have even forgotten that you have on hand — the one inside the silicon of a MOSFET — the intrinsic body diode. [Jakub]’s main project is an Arduino ...

The L-Series 600-V HEXFET power-MOSFET family's fast-body-diode characteristics are tailored for soft switching applications such as zero-voltage-switching (ZVS) circuits. The ZVS technique ...

Toshiba SiC MOSFETs alleviate this issue by a device structure that embeds Schottky barrier diodes (SBDs) into the MOSFET to inactivate body diodes, but positioning the SBDs on the chip reduces ...

Because the Schottky is integrated with the mosfet, its forward voltage drop is much lower than the voltage drop across the intrinsic body diode of the mosfet. According to the supplier, this results ...