Scientists have simulated dozens of electron transport layer-free cell structures and have identified the optimal design with a Zr:In2O3 front transparent electrode, a CuSCN hole transport layer ...

Figuring out certain aspects of a material's electron structure can take a lot out of a computer—up to a million CPU hours, in fact. A team of Yale researchers, though, are using a type of ...

Find the technical paper here. February 2025. E. Sarkar et al., “First Demonstration of High-Performance and Extremely Stable W-Doped In2O3 Gate-All-Around (GAA) Nanosheet FET,” in IEEE Transactions ...