Nexperia has put 1,200V silicon carbide mosfet die into D2PAK-7 surface mount package ... The inverse-parallel source drain diode drops 4.4V conducting 40A at 25°C (-5Vgate). Max currents are 67A ...

This SiC Schottky diode is encapsulated in a Real-2-Pin (R2P) TO-220-2 through-hole power plastic package. Additional package options include the surface mount (DPAK R2P and D2PAK R2P) and ...

UnitedSiC, a manufacturer of silicon carbide (SiC) power semiconductors, has expanded its FET portfolio with the introduction of six new 650V and 1200V options, all housed in the industry standard ...

SiC devices had been supplied in D2PAK 7lead packages,” according to the company. “The TOLL package offers 30% savings in PCB area over a D2PAK package, and at a profile of 2.30mm, it occupies 60% ...